- Research
- Research
- Publications
- PhD Theses
- Projects
- Academics
- Admissions
- M.Tech @ ESE
- Ph.D @ ESE
- DD MSc - Phd
- DD (B.Tech.-M.Tech.)
- B.Tech
- Minor in Energy
- Faculty Advisors
- Activities
- News and Events
- Seminars
- List of Holidays
Stable p–i–n FAPbBr3 Devices with Improved Efficiency Using Sputtered ZnO as Electron Transport Layer
Thu, 2021-07-22 16:10 — venkatr
| Title | Stable p–i–n FAPbBr3 Devices with Improved Efficiency Using Sputtered ZnO as Electron Transport Layer |
| Publication Type | Journal Article |
| Year of Publication | 2017 |
| Authors | Subbiah, A. S., S. Agarwal, N. Mahuli, P. Nair, M. van Hest, and S. K. Sarkar |
| Journal | Advanced Materials Interfaces |
| Volume | 4 |
| URL | https://www.scopus.com/inward/record.uri?eid=2-s2.0-85012023577&doi=10.1002%2fadmi.201601143&partnerID=40&md5=37b3602aeba3bc6eff0b1fcfd026a741 |
| DOI | 10.1002/admi.201601143 |