Atomic Layer Deposition

Atomic Layer Deposition (ALD) is a gas phase thin film deposition technique involving sequential and self-limiting surface reactions. ALD provides uniform, pin hole free, conformal films on a variety of substrates.
Make and Model:
Custom built Atomic Layer Depostion (ALD) reactor equipped with 10 Torr capacitance manometer, Baratron. Constant flow of 99.999% N2 gas controlled by Mass flow controller (MFC) maintains the required pressure inside the reactor maintained by constant pumping by a rotary pump.
  • Uniform temperature of the reactor walls is maintained by ceramic heaters controlled by Eurotherm.
  • In-situ Quartz Crystal Microbalance (QCM) measurements are possible to measure the growth rate of films deposited.
  • In-situ four probe measurement technique exists for electrical conductivity measurements during film deposition.
  •  In-situ fourier transform infrared (FTIR) set up present for studying the surface chemistry of ALD films.
  • Separate reactors available for deposition of oxide, nitride, sulphide and organic films to avoid contamination.
Whether facility is open to external users? :  No
Devices and Interfaces Lab, Transit building, 2nd Floor, IIT Bombay, Powai, Mumbai-400076.
Contact Details:
Convener/Incharge Name : Prof. Shaibal K. Sarkar,
Dept, of Energy Science and Engineering.