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Post deposition annealing temperature effect on silicon quantum dots embedded in silicon nitride dielectric multilayer prepared by hot-wire chemical vapor deposition
Thu, 2021-07-22 16:07 — venkatr
| Title | Post deposition annealing temperature effect on silicon quantum dots embedded in silicon nitride dielectric multilayer prepared by hot-wire chemical vapor deposition |
| Publication Type | Journal Article |
| Year of Publication | 2009 |
| Authors | Panchal, A. K., and C. S. Solanki |
| Journal | Thin Solid Films |
| Volume | 517 |
| Pagination | 3488-3491 |
| URL | https://www.scopus.com/inward/record.uri?eid=2-s2.0-64349101084&doi=10.1016%2fj.tsf.2009.01.080&partnerID=40&md5=fcbc10e83dae1c97cfbc03d0773ec5f8 |
| DOI | 10.1016/j.tsf.2009.01.080 |