Influence of boron rich layer on quantum efficiencies in p +-n-n + Si structures during diffusion of boron spin on dopant source

Thu, 2021-07-22 16:10 — venkatr
TitleInfluence of boron rich layer on quantum efficiencies in p +-n-n + Si structures during diffusion of boron spin on dopant source
Publication TypeJournal Article
Year of Publication2018
AuthorsSingha, B., and C. S. Solanki
JournalMaterials Research Express
Volume5
URLhttps://www.scopus.com/inward/record.uri?eid=2-s2.0-85041617696&doi=10.1088%2f2053-1591%2faaa5f1&partnerID=40&md5=0d3b3508f84196c930dc1470443c79e1
DOI10.1088/2053-1591/aaa5f1

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