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Ground-state energy trends in single and multilayered coupled InAs/GaAs quantum dots capped with InGaAs layers: Effects of InGaAs layer thickness and annealing temperature
Thu, 2021-07-22 16:07 — venkatr
| Title | Ground-state energy trends in single and multilayered coupled InAs/GaAs quantum dots capped with InGaAs layers: Effects of InGaAs layer thickness and annealing temperature |
| Publication Type | Journal Article |
| Year of Publication | 2013 |
| Authors | Shah, S., K. Ghosh, S. Jejurikar, A. Mishra, and S. Chakrabarti |
| Journal | Materials Research Bulletin |
| Volume | 48 |
| Pagination | 2933-2939 |
| URL | https://www.scopus.com/inward/record.uri?eid=2-s2.0-84878308693&doi=10.1016%2fj.materresbull.2013.04.028&partnerID=40&md5=b803c5493392791cf983787c722d302c |
| DOI | 10.1016/j.materresbull.2013.04.028 |